Correlation-induced symmetry-broken states in large-angle twisted bilayer graphene on MoS2
Kaihui Li, Long-Jing Yin, Chenglong Che, Xueying Liu, Yulong Xiao,, Songlong Liu, Qingjun Tong, Si-Yu Li, Anlian Pan

TL;DR
This study demonstrates that correlation-induced symmetry-broken states can be achieved in large-angle twisted bilayer graphene by engineering the dielectric environment and interlayer coupling, expanding the conditions for correlated phenomena beyond magic angles.
Contribution
The paper shows that strong correlation effects in twisted bilayer graphene can be realized at non-magic angles through substrate engineering and STM tip modulation, broadening the scope of correlated state studies.
Findings
Symmetry-broken states observed at 3.45° twist angle
Giant splitting of van Hove singularity peak
Stripe charge order indicating strong correlations
Abstract
Strongly correlated states are commonly emerged in twisted bilayer graphene (TBG) with magic-angle, where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45{\deg} TBG, via engineering this non-magic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the bandwidth of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially…
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
