Robust atmospherically stable hybrid SrVO3/Graphene//SrTiO3 template for fast and facile large-area transfer of complex oxides onto Si

TL;DR

This paper presents a hybrid SrVO3/Graphene//SrTiO3 template that enables fast, stable, and large-area transfer of complex oxides onto silicon, enhancing integration for electronic and optoelectronic devices.

Contribution

The study introduces a novel hybrid template combining graphene and SrVO3 that improves transfer rates and atmospheric stability for complex oxides onto silicon substrates.

Findings

Graphene enhances SVO dissolution rate by over ten times.

Successful transfer of ferroelectric BTO and PZT onto target substrates.

Demonstration of ferroelectric properties in transferred oxides.

Abstract

Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO) at the interface, and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers, without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO3 (SVO) as a sacrificial buffer layer. We show that the graphene layer enhances the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid template by growing ferroelectric BaTiO3 (BTO) via PLD and Pb(Zr, Ti)O3 (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.