High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 {\mu}m waveband

TL;DR

This paper presents a high-speed 4x4 silicon photonic electro-optic switch operating at the 2 μm waveband, demonstrating fast switching times, low crosstalk, and low power consumption suitable for optical communication applications.

Contribution

It introduces the first plasma dispersive 4x4 electro-optic switch at 2 μm with record switching speeds and broad bandwidth, advancing silicon photonics for this waveband.

Findings

Switch operates over 45 nm bandwidth

Switching times of 1.78 ns (rise) and 3.02 ns (fall)

Crosstalk below -15 dB and power below 19.15 mW

Abstract

The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-${\mu}$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-${\mu}$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband.