Comparative Analysis of THz Signal Emission from SiO$_2$/CoFeB/Metal Heterostructures: Wideband and High-Frequency THz Signal Advantage of PtBi-based Emitter
Tristan Joachim Winkel, Tahereh Sadat Parvini, Finn-Frederik Stiewe,, Jakob Walowski, Farshad Moradi, Markus M\"unzenberg

TL;DR
This study compares THz emission from various SiO$_2$/CoFeB/Metal heterostructures, highlighting the superior bandwidth and high-frequency capabilities of PtBi-based emitters for advanced THz applications.
Contribution
It introduces a detailed analysis of THz signals from heterostructures with different nonmagnetic metals, emphasizing the advantages of PtBi alloys for broadband and high-frequency THz emission.
Findings
Pt-NM layer yields highest THz amplitude
PtBi emitter shows wider bandwidth and higher central peak
PtBi alloys are promising for high-frequency THz applications
Abstract
Spintronic THz emitters have attracted much attention due to their desirable properties, such as affordability, ultra-wideband capability, high efficiency, and tunable polarization. In this study, we investigate the characteristics of THz signals, including their frequency, bandwidth, and amplitude, emitted from a series of heterostructures with ferromagnetic (FM) and nonmagnetic (NM) materials. The FM layer consists of a wedge-shaped CoFeB layer with a thickness of 0 to 5 nm, while the NM materials include various metals such as Pt, Au, W, Ru, PtBi, and AgBi alloys. Our experiments show that the emitter with Pt-NM layer has the highest amplitude of the emitted THz signal. However, the PtBi-based emitter exhibits a higher central THz peak and wider bandwidth, making it a promising candidate for broadband THz emitters. These results pave the way for…
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Taxonomy
TopicsMagnetic properties of thin films · Terahertz technology and applications · Molecular Junctions and Nanostructures
