Drive Current Boost in Double-Channeled Nanotube Gate all Around Field Effect Transistor

TL;DR

This paper introduces a novel double-channeled nanotube GAAFET structure that significantly boosts drive current and maintains good electrostatic control, outperforming traditional nanotube and nanowire GAAFETs.

Contribution

The paper proposes a new double-channeled nanotube GAAFET design with enhanced drive current and maintains electrostatic control, demonstrating superior performance over existing nanotube and nanowire GAAFETs.

Findings

Ion gain of 64.8% over NT GAAFET

Ion gain of 1.7 times over NW GAAFET

Ion/Ioff ratio slightly improved in DC NT GAAFET

Abstract

We demonstrate an exotic doubled-channeled NT GAAFET (DC NT GAAFET) structure with Ion boost in comparison with NT GAAFET and NW GAAFET with the same footprint. Ion gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared with NT GAAFET and NW GAAFET. Ioff of DC NT GAAFET degrades by 61.8% than that of NT GAAFET, SS is almost comparable in two kinds of device structures, whereas Ion/Ioff ratio in DC NT GAAFET still gains subtly, by 2.4%, than NT GAAFET thanks to the substantial Ion aggrandizement, indicating the sustained superior gate electrostatic controllability in DC NT GAAFET with regarding to NT GAAFET regardless of additional channel incorporated. On the other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance than NW GAAFET in terms of high operation speed and better electrostatic controllability manifested by suppressed SCEs.