First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

TL;DR

This paper uses first-principles calculations and molecular dynamics simulations to demonstrate that Germanium Carbide (GeC) has high thermal conductivity, making it a promising material for power electronics.

Contribution

It introduces the potential of GeC as a high thermal conductivity material for power MOSFETs, supported by first-principles calculations and MD simulations.

Findings

GeC exhibits high thermal conductivity suitable for power devices.

Simulation results support GeC as a promising replacement for Si in MOSFETs.

Proposed 4H-GeC MOSFET could offer improved performance over Si-based devices.

Abstract

Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.