A review of uranium-based thin films
R. Springell, E. Lawrence Bright, D. A. Chaney, L. M. Harding, C., Bell, R. C. C. Ward, G. H. Lander

TL;DR
This review summarizes two decades of research on uranium-based thin films, highlighting fabrication advances, property modifications due to substrate interactions, and potential applications in nuclear and spintronic technologies.
Contribution
It provides a comprehensive overview of recent developments in uranium thin films, including new epitaxial growth techniques and potential future applications in heterostructures.
Findings
Successful fabrication of epitaxial uranium and UO2 films
Discovery of strain-induced property changes in films
Potential applications in nuclear fuel and spintronics
Abstract
Thin films based on silicon and transition-metal elements dominate the semiconducting industry and are ubiquitous in all modern devices. Films have also been produced in the rare-earth series of elements for both research and specialized applications. Thin films of uranium and uranium dioxide were fabricated in the 1960s and 1970s, but there was little sustained effort until the early 2000s. Significant programmes started at Oxford University (transferring to Bristol University in 2011), and Los Alamos National Laboratory (LANL) in New Mexico, USA. In this review we cover the work that has been published over the last ~20 years with these materials. Important breakthroughs occurred with the fabrication of epitaxial thin films of initially uranium metal and UO2, but more recently of many other uranium compounds and alloys. These have led to a number of different experiments that are…
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Taxonomy
TopicsNuclear Materials and Properties · Nuclear reactor physics and engineering · Radioactive element chemistry and processing
