Four-band tight-binding model of TiSiCO-family monolayers
Chaoxi Cui, Yilin Han, Ting-Ting Zhang, Zhi-Ming Yu, Yugui Yao

TL;DR
This paper develops a minimal four-band tight-binding model for TiSiCO-family monolayers that accurately captures their low-energy electronic structure, valley-layer coupling, and topological properties, facilitating future theoretical studies.
Contribution
The authors introduce a symmetry-allowed four-band tight-binding model fitted to first-principles data, capturing key electronic and topological features of TiSiCO-family monolayers with strong valley-layer coupling.
Findings
The model reproduces the electronic band structure accurately.
It captures the strong valley-layer coupling and high-order topology.
It suggests potential topological phase transitions under electric fields and strain.
Abstract
The TiSiCO-family monolayers have recently been attracting significant attention due to their unique valley-layer coupling (VLC). In this work, we present a minimal, four-band tight-binding (TB) model to capture the low-energy physics of the TiSiCO-family monolayers CO ( Ti, Zr, Hf; Si, Ge) with strong VLC. These monolayers comprise two atom layers separated by approximately \AA ~in the out-of-plane direction. Around each valley ( or ), the conduction and valence bands are mainly dominated by the and orbitals of the top atoms,and the and orbitals of the bottom atoms. Using these four states as a basis, we construct a symmetry-allowed TB model. Through parameter fitting from first-principles calculations, the four-band TB model not only…
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Taxonomy
Topics2D Materials and Applications · Superconductivity in MgB2 and Alloys · MXene and MAX Phase Materials
