Domain control and periodic poling of epitaxial ScAlN

TL;DR

This paper demonstrates high-fidelity ferroelectric domain switching and periodic poling of epitaxial ScAlN thin films, enabling precise control of polarization for advanced ferroelectric and nonlinear optical applications.

Contribution

It introduces a method for lithographically controlling ferroelectric domains and periodic poling in epitaxial ScAlN thin films, a novel achievement in the field.

Findings

Uniform poling achieved with periods from 2 um to 0.4 um

High-fidelity ferroelectric domain switching demonstrated

Potential for applications in ferroelectric storage and nonlinear optics

Abstract

ScAlN is an emerging ferroelectric material that possesses large band gap, strong piezoelectricity, and holds great promises for enhanced \chi^{(2)} nonliearity. In this study, we demonstrate high-fidelity ferroelectric domain switching and periodic poling of Al-polar ScAlN thin film epitaxially grown on on c-axis sapphire substrate using gallium nitride as a buffer layer. Uniform poling of ScAlN with periods ranging from 2 um to 0.4 um is realized. The ability to lithographically control the polarization of epitaxial ScAlN presents a critical advance for its further exploitation in ferroelectric storage and nonlinear optics applications.