A chip-scale second-harmonic source via injection-locked all-optical poling

TL;DR

This paper demonstrates a chip-scale, highly coherent second-harmonic source using injection-locked semiconductor lasers and silicon nitride microresonators, enabling efficient, reconfigurable frequency doubling in integrated photonics.

Contribution

It introduces a novel integrated SH source leveraging optical poling via the photogalvanic effect, eliminating the need for poling electrodes and enabling broadband, efficient SH generation.

Findings

Achieved ultra-narrow linewidth of 57 Hz at fundamental frequency.

Generated SH power exceeding 2 mW with 280%/W efficiency.

Operates across C and L telecom bands with reconfigurable poling.

Abstract

Second-harmonic generation allows for coherently bridging distant regions of the optical spectrum, with applications ranging from laser technology to self-referencing of frequency combs. However, accessing the nonlinear response of a medium typically requires high-power bulk sources, specific nonlinear crystals, and complex optical setups, hindering the path toward large-scale integration. Here we address all of these issues by engineering a chip-scale second-harmonic (SH) source based on the frequency doubling of a semiconductor laser self-injection-locked to a silicon nitride microresonator. The injection-locking mechanism, combined with a high-Q microresonator, results in an ultra-narrow intrinsic linewidth at the fundamental harmonic frequency as small as 57 Hz. Owing to the extreme resonant field enhancement, quasi-phase-matched second-order nonlinearity is photoinduced through the coherent photogalvanic effect and the high coherence is mapped on the generated SH field. We show how such optical poling technique can be engineered to provide efficient SH generation across the whole C and L telecom bands, in a reconfigurable fashion, overcoming the need for poling electrodes. Our device operates with milliwatt-level pumping and outputs SH power exceeding 2 mW, for an efficiency as high as 280%/W under electrical driving. Our findings suggest that standalone, highly-coherent, and efficient SH sources can be integrated in current silicon nitride photonics, unlocking the potential of $\chi^{(2)}$ processes in the next generation of integrated photonic devices.