Description of Excitonic Absorption Using the Sommerfeld Enhancement Factor and Band-Fluctuations
K. Liz\'arraga, P. Llontop, L. A. Enrique-Mor\'an, M. Pi\~neiro, E., Perez, E. Serquen, A. Tejada, F. Ruske, L. Korte, J. A. Guerra

TL;DR
This paper introduces a simple band-fluctuations model to accurately determine exciton binding energies and bandgaps in materials like GaAs and perovskites, aligning well with experimental and theoretical data.
Contribution
It proposes an analytic approach based on the bands-fluctuations model that simplifies extraction of exciton binding energies and bandgaps, improving upon existing models.
Findings
Accurately determined bandgaps and exciton binding energies for GaAs and perovskites
Results agree with previous experimental and theoretical reports
Upper bounds for exciton-polaron binding energies are consistent with optical data
Abstract
One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the Elliott model and its several modifications such as non-parabolic bands, magnetic potentials and electro-hole-polaron interactions. However, exciton binding energies obtained from measured data often vary strongly depending on the chosen model. Here, we propose an alternative and rather simple approach, which has previously been successful in the determination of the optical bandgap of amorphous, direct and indirect semiconductors, based on the bands-fluctuations (BF) model. In this model, the fluctuations due to disorder, temperature or lattice vibrations give rise to the well…
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Taxonomy
TopicsPerovskite Materials and Applications · Semiconductor Quantum Structures and Devices · Optical properties and cooling technologies in crystalline materials
