RowPress: Amplifying Read Disturbance in Modern DRAM Chips
Haocong Luo, Ataberk Olgun, A. Giray Ya\u{g}l{\i}k\c{c}{\i}, Yahya Can, Tu\u{g}rul, Steve Rhyner, Meryem Banu Cavlak, Jo\"el Lindegger, Mohammad, Sadrosadati, Onur Mutlu

TL;DR
This paper uncovers and analyzes a new read-disturb phenomenon called RowPress in modern DDR4 DRAM chips, demonstrating its potential to break memory isolation and proposing mitigation strategies.
Contribution
It experimentally characterizes RowPress, a novel read-disturb effect, showing its prevalence across chips, its amplification of vulnerabilities, and proposing mitigation techniques.
Findings
RowPress affects all major DRAM manufacturers.
It amplifies read-disturb vulnerabilities by reducing bitflip activation counts.
Mitigation techniques can be adapted to counter RowPress with minimal performance impact.
Abstract
Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and closing (i.e., hammering) a DRAM row many times causes bitflips in physically nearby rows. This paper experimentally demonstrates and analyzes another widespread read-disturb phenomenon, RowPress, in real DDR4 DRAM chips. RowPress breaks memory isolation by keeping a DRAM row open for a long period of time, which disturbs physically nearby rows enough to cause bitflips. We show that RowPress amplifies DRAM's vulnerability to read-disturb attacks by significantly reducing the number of row activations needed to induce a bitflip by one to two orders of magnitude under realistic conditions. In extreme cases, RowPress induces bitflips in a…
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Taxonomy
TopicsSecurity and Verification in Computing · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
