Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Mahmoud Elhajhasan, Wilken Seemann, Katharina Dudde, Daniel Vaske,, Gordon Callsen, Ian Rousseau, Thomas F. K. Weatherley, Jean-Fran\c{c}ois, Carlin, Rapha\"el Butt\'e, Nicolas Grandjean, Nakib H. Protik, and Giuseppe, Romano

TL;DR
This study combines microphotoluminescence spectroscopy and Raman thermometry to non-invasively measure the thermal conductivity of a freestanding III-nitride semiconductor membrane with high spatial resolution.
Contribution
The paper introduces a novel experimental setup for simultaneous optical and thermal analysis of semiconductor membranes, enabling accurate, non-invasive thermal conductivity measurements at microscale.
Findings
Measured thermal conductivity of 95 W/m·K at room temperature.
Achieved temperature mapping with sub-micrometer spatial resolution.
Validated experimental results with ab initio calculations.
Abstract
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence (PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity can be obtained using only optical, non-invasive means. For this, we consider the balance of different contributions to thermal transport given by, e.g., excitons, charge carriers, and heat carrying phonons. Further complication is given by the fact that this membrane is made from direct bandgap semiconductors, designed to emit light based on an InGaN () quantum well embedded in GaN. To meet these challenges, we designed a novel experimental setup that enables the necessary optical and thermal characterizations in parallel. We perform micro-Raman thermometry, either…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Thermal properties of materials · GaN-based semiconductor devices and materials
