Ion-beam sputtering of NiO hole transporting layers for p-i-n halide perovskite solar cells
P. Gostishchev, L.O. Luchnikov, O. Bronnikov, V. Kurichenko, D.S., Muratov, A.A. Aleksandrov, A.R. Tameev, M.P. Tyukhova, S. Le Badurin. I.V.,, Ryabtseva M.V., D. Saranin, A. Di Carlo

TL;DR
This study develops a reactive ion-beam sputtering process for NiO hole transport layers in perovskite solar cells, achieving high efficiency and uniform films suitable for large-area and flexible applications.
Contribution
It introduces a novel ion-beam sputtering method with post-treatment annealing for NiO layers, enhancing device performance and scalability in perovskite solar cells.
Findings
Achieved up to 20.14% power conversion efficiency.
Produced uniform NiO films with roughness below 0.5 nm.
Demonstrated scalability on large-area and flexible substrates.
Abstract
Ion-beam sputtering offers significant benefits in terms of deposition uniformity and pinhole-free thin-films without limiting the scalability of the process. In this work, the reactive ion-beam sputtering of nickel oxide has been developed for the hole transporting layer of a p-i-n perovskite solar cells (PCSs). The process is carried out by oxidation of the scattered Ni particles with additional post-treatment annealing regimes. Using deposition rate of 1.2 nm/min allowed growth of very uniform NiO coating with the roughness below 0.5 nm on polished Si wafer (15x15 cm2). We performed a complex investigation of structural, optical, surface and electrical properties of the NiO thin-films. The post-treatment annealing (150-300C) was considered as an essential process for improvement of the optical transparency, decrease of defects concentration and gain of the charge carrier mobility. As…
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Taxonomy
TopicsPerovskite Materials and Applications · Thin-Film Transistor Technologies · Conducting polymers and applications
