Novel 2D vanadium sulphides: synthesis, atomic structure engineering and charge density waves

TL;DR

This study reports the synthesis and atomic structure analysis of new ultra-thin vanadium sulphide 2D materials, revealing ordered vacancies, novel layered phases, and charge density waves through advanced microscopy and theoretical methods.

Contribution

It introduces new vanadium-rich 2D vanadium sulphides synthesized via molecular beam epitaxy, with detailed atomic structures and charge density wave properties characterized.

Findings

Controlled synthesis of single-layer VS2 and vanadium-rich phases.

Identification of S-vacancy ordering and atomic structure of V4S7.

Observation of charge density waves in V5S8-derived layers.

Abstract

Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and the sulphur pressure during annealing. Through annealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of density-functional theory calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. By depositing larger amounts of vanadium and sulphur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2x2 V-layers between sheets of VS2. We provide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V5S8-derived islands.