Enhancing interfacial thermal conductance of amorphous interface by optimized interfacial mass distribution

TL;DR

This paper investigates how optimizing mass distribution at amorphous interfaces between crystalline silicon and germanium can significantly improve thermal conductance, addressing challenges in nanoscale thermal management.

Contribution

It demonstrates the effectiveness of graded mass distribution in amorphous interfaces, extending previous crystalline interface strategies to amorphous systems.

Findings

Optimized mass distribution increases interfacial thermal conductance.

Extended atomistic Greens function method effectively models amorphous interfaces.

Graded mass distribution outperforms uniform distribution in thermal conductance.

Abstract

Interfacial thermal resistance arises challenges for the thermal management as the modern semiconductors are miniatured to nanoscale. Previous studies found that graded mass distribution in interface can maximumly enhance the interfacial thermal conductance of crystalline interface, however, whether this strategy is effective for amorphous interface is less explored. In this work, graded mass distribution in the amorphous interface between crystalline Si and crystalline Ge is optimized to increase the interfacial thermal conductance by the extended atomistic Greens function method.