Atomic-Scale Tailoring of Chemisorbed Atomic Oxygen on Epitaxial Graphene for Graphene-Based Electronic Devices

TL;DR

This study demonstrates atomic-scale control of chemisorbed atomic oxygen on epitaxial graphene, enabling band gap engineering and potential for atomic-scale electronic device development.

Contribution

It introduces a method for precise atomic manipulation of oxygen on graphene, leading to tunable electronic properties for device applications.

Findings

Oxygen induces a band gap at graphene's Dirac point.

Selective desorption or hopping of oxygen atoms is achievable with STM bias.

Atomic-scale tailoring of graphene oxide is demonstrated.

Abstract

Graphene, with its unique band structure, mechanical stability, and high charge mobility, holds great promise for next-generation electronics. Nevertheless, its zero band gap challenges the control of current flow through electrical gating, consequently limiting its practical applications. Recent research indicates that atomic oxygen can oxidize epitaxial graphene in a vacuum without causing unwanted damage. In this study, we have investigated the effects of chemisorbed atomic oxygen on the electronic properties of epitaxial graphene, using scanning tunneling microscopy (STM). Our findings reveal that oxygen atoms effectively modify the electronic states of graphene, resulting in a band gap at its Dirac point. Furthermore, we demonstrate that it is possible to selectively induce desorption or hopping of oxygen atoms with atomic precision by applying appropriate bias sweeps with an STM tip. These results suggest the potential for atomic-scale tailoring of graphene oxide, enabling the development of graphene-based atomic-scale electronic devices.