Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics
Ning Xu, Xudong Pei, Lipeng Qiu, Li Zhan, Peng Wang, Yi Shi, Songlin, Li

TL;DR
This paper introduces a non-invasive photodelamination technique for 2D van der Waals semiconductors, enabling uniform monolayer production with preserved lattice quality and high electron mobility, advancing post-etching processing for electronics.
Contribution
The study demonstrates a low-power, ambient photodelamination method for selectively stripping excess layers in 2D semiconductors without damaging the lattice, improving wafer uniformity.
Findings
Fast etching rates of 0.3-0.8 μm/min at varied temperatures.
Preservation of lattice quality with defect density similar to pristine flakes.
High electron mobility up to 80 cm²/V·s in as-etched monolayers.
Abstract
Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain completely uniform monolayer semiconductor wafers free of over-grown islands. Here, we report the observation of the energy funneling effect and ambient photodelamination phenomenon in inhomogeneous few-layer WS flakes under low illumination fluencies down to several nW/m and its potential as a non-invasive post-etching strategy for selectively stripping the local excessive overlying islands. Photoluminescent tracking on the photoetching traces reveals relatively fast etching rates around m/min at varied temperatures and an activation energy of eV. By using crystallographic and electronic characterization, we also confirm the non-invasive nature of the low-power photodelamination…
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