High-resolution acoustic field mapping of GHz phononic crystals with atomic force microscopy

TL;DR

This paper introduces a novel atomic force microscopy technique for high-resolution mapping of GHz acoustic fields in phononic crystals, revealing insights into mode excitation, dispersion, and symmetry effects crucial for advanced on-chip acoustic technologies.

Contribution

It presents a new method for mapping GHz acoustic fields in phononic crystals using atomic force microscopy, linking scattering effects to crystal symmetry and dispersion.

Findings

Incoherent scattering excites a wide range of modes enabling dispersion mapping.

Phononic crystal symmetry influences coherent scattering effects.

The technique advances understanding of GHz acoustic wave manipulation for on-chip applications.

Abstract

On-chip technology based on acoustic waves is a strong asset in modern telecommunication with the prospects of becoming a cornerstone of next-generation devices. In this context, mapping and manipulating acoustic waves through coherent scattering is pivotal for a non-trivial control of the flow of acoustic energy, which could consequently enable advanced information manipulation. To this end, here a technique for mapping acoustic fields is introduced and used for characterizing $\mu$m-sized phononic crystals defined in GaAs slabs and excited by GHz surface acoustic waves (SAWs) based on atomic force microscopy. It is shown that incoherent scattering excites a wide distribution of modes, which enables the mapping of the dispersion relation of the two-dimensional structures, while the phononic crystal symmetry directly correlates with coherent scattering effects. Enabling the use of acoustic atomic force microscopy and understanding the role of scattering are of paramount importance for the versatile use of GHz acoustic waves in technological applications, setting the baseline for advanced operations like hyperspectral filtering, beam steering or spatial-division multiplexing.