Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

TL;DR

This paper presents a novel micromechanical field-effect transistor (MMFET) that detects terahertz signals by converting mechanical oscillations into optical signals using an interferometric readout, enhancing THz detection sensitivity.

Contribution

The work introduces a new MMFET design integrating mechanical and plasmonic resonances with optical readout for improved terahertz detection capabilities.

Findings

Effective THz detection achieved through mechanical and plasmonic resonance coupling.

Optical interferometric readout enhances detection sensitivity.

Demonstrated potential for integrated THz sensing applications.

Abstract

We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection.