Interaction-driven spontaneous broken-symmetry insulator and metals in ABCA tetralayer graphene
Kai Liu, Jian Zheng, Yating Sha, Bosai Lyu, Fengping Li, Youngju Park,, Yulu Ren, Kenji Watanabe, Takashi Taniguchi, Jinfeng Jia, Weidong Luo, Zhiwen, Shi, Jeil Jung, Guorui Chen

TL;DR
This paper investigates how Coulomb interactions in ABCA tetralayer graphene induce various spontaneous broken-symmetry states, including insulators and metals, with tunable phase transitions driven by carrier density and electric displacement.
Contribution
It demonstrates the experimental observation of multiple broken-symmetry states and their transitions in tetralayer graphene, highlighting the role of Coulomb interactions in these phenomena.
Findings
Observation of a layer antiferromagnetic insulator at zero doping and displacement.
Identification of continuous phase transitions driven by electric displacement.
Detection of isospin polarized metals with tunable spin and valley polarization.
Abstract
Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the stacking orders of tetralayer graphene devices. Through quantum transport measurements, we observe a range of spontaneous broken-symmetry states and their transitions, which can be finely tuned by carrier density n and electric displacement field D. Specifically, we observe a layer antiferromagnetic insulator at n = D = 0 with a gap of approximately 15 meV. Increasing D allows for a continuous phase transition from a layer antiferromagnetic insulator to a layer polarized insulator. By…
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
