Scale-free switching of polarization in the layered ferroelectric material CuInP$_2$S$_6$
N. Sivadas, Bobby G. Sumpter, P. Ganesh

TL;DR
This paper models the incoherent, scale-free polarization switching mechanism in CuInP$_2$S$_6$, revealing weakly coupled local dipoles with low switching barriers, which explains its unique ferroelectric properties and potential for neuromorphic device applications.
Contribution
It introduces a new understanding of incoherent, scale-free polarization switching in CIPS based on first-principles calculations, contrasting with previous coherent switching models.
Findings
Switching involves weakly coupled local dipoles rather than macroscopic polarization.
Switching barrier is significantly lower than in traditional ferroelectrics like HfO$_2$.
Piezoelectric response and polarization depend linearly on local dipolar order.
Abstract
Using first-principles calculations we model the out-of-plane switching of local dipoles in CuInPS (CIPS) that are largely induced by Cu off-centering. Previously, a coherent switching of polarization via a quadruple-well potential was proposed for these materials. In the super-cells we considered, we find multiple structures with similar energies but with different local polar order. Our results suggest that the individual dipoles are weakly coupled in-plane and under an electric field at very low temperatures these dipoles in CIPS should undergo incoherent disordered switching. The barrier for switching is determined by the single Cu-ion switching barrier. This in turn suggests a scale-free polarization with a switching barrier of 203.6-258.0 meV, a factor of five smaller than that of HfO (1380 meV) a prototypical scale-free ferroelectric. The mechanism of…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Quantum-Dot Cellular Automata · Ferroelectric and Negative Capacitance Devices
