Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

TL;DR

This paper demonstrates that photon-trapping surface structures in silicon significantly enhance photoabsorption, surpassing gallium arsenide, and enable high-efficiency, high-speed photodetectors compatible with CMOS technology.

Contribution

The study introduces photon-trapping surface structures that dramatically improve silicon's photoabsorption efficiency, surpassing traditional materials like gallium arsenide, and predicts their integration into CMOS-compatible photodetectors.

Findings

Over an order of magnitude increase in absorption efficiency.

Enhanced photon density of states and reduced optical group velocity.

Predicted high absorption efficiency in ultra-thin silicon films.

Abstract

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing photon-trapping surface structures to show a prodigious improvement of photoabsorption in one-micrometer-thin silicon, surpassing the inherent absorption efficiency of gallium arsenide for a broad spectrum. The photon-trapping structures allow the bending of normally incident light by almost ninety degrees to transform into laterally propagating modes along the silicon plane. Consequently, the propagation length of light increases, contributing to more than an order of magnitude improvement in absorption efficiency in photodetectors. This high absorption phenomenon is explained by FDTD analysis, where we show an enhanced photon density of states while substantially reducing the optical group velocity of light compared to silicon without photon-trapping structures, leading to significantly enhanced light-matter interactions. Our simulations also predict an enhanced absorption efficiency of photodetectors designed using 30 and 100-nanometer silicon thin films that are compatible with CMOS electronics. Despite a very thin absorption layer, such photon-trapping structures can enable high-efficiency and high-speed photodetectors needed in ultra-fast computer networks, data communication, and imaging systems with the potential to revolutionize on-chip logic and optoelectronic integration.