Effects of Pressure on the Electronic and Magnetic Properties of Bulk NiI$_{2}$
Jesse Kapeghian, Danila Amoroso, Connor A. Occhialini, Luiz G. P., Martins, Qian Song, Jesse S. Smith, Joshua J. Sanchez, Jing Kong, Riccardo, Comin, Paolo Barone, Bertrand Dup\'e, Matthieu J. Verstraete, Antia S. Botana

TL;DR
This study investigates how hydrostatic pressure influences the electronic and magnetic properties of bulk NiI$_{2}$, revealing pressure-induced enhancements in interlayer coupling and magnetic transition temperature through combined first-principles and experimental methods.
Contribution
It provides new insights into pressure effects on NiI$_{2}$'s magnetic interactions and structural parameters, expanding understanding of tunable 2D magnetic materials.
Findings
Interlayer antiferromagnetic coupling increases with pressure.
Magnetic transition temperature rises monotonically under pressure.
Pressure enhances magnetic frustration and modifies the helimagnetic ground state.
Abstract
Transition metal dihalides have recently garnered interest in the context of two-dimensional van der Waals magnets as their underlying geometrically frustrated triangular lattice leads to interesting competing exchange interactions. In particular, NiI is a magnetic semiconductor that has been long known for its exotic helimagnetism in the bulk. Recent experiments have shown that the helimagnetic state survives down to the monolayer limit with a layer-dependent magnetic transition temperature that suggests a relevant role of the interlayer coupling. Here, we explore the effects of hydrostatic pressure as a means to enhance this interlayer exchange and ultimately tune the electronic and magnetic response of NiI. We study first the evolution of the structural parameters as a function of external pressure using first-principles calculations combined with x-ray diffraction…
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Taxonomy
Topics2D Materials and Applications · Heusler alloys: electronic and magnetic properties · Magnetic and transport properties of perovskites and related materials
