Light-activated memristor by Au-nanoparticle embedded HfO$_2$-bilayer/p-Si MOS device

TL;DR

This paper introduces a novel light-activated memristor using Au-nanoparticles embedded in a HfO₂ bilayer on p-Si, demonstrating controllable resistive switching under illumination with promising endurance and retention.

Contribution

It presents a new light-activated memristor design utilizing Au-nanoparticles embedded in HfO₂ bilayers, enabling optical control of resistive states in a CMOS-compatible device.

Findings

Memristive effect activated/deactivated by light pulses.

Memory window of ~1 V and resistance ratio of ~10.

Endurance of at least 150 cycles and retention of ~10,000 seconds.

Abstract

The current work proposes a novel scheme for developing a light-activated non-filamentary memristor device by fabricating an Au-nanoparticle embedded HfO$_2$-bilayer/p-Si MOS structure. Under illumination, the electrons in such embedded Au-nanoparticles are excited from d-level to quantized s-p level and are swept out on application of an appropriate gate bias, leaving behind the holes without recombination. Such photogenerated holes are confined within the nanoparticles and thus screen the external field to lead to a memristive effect in the device. The phenomenon is experimentally observed in the fabricated Pt/HfO$_2$-(layer-II)/Au-NPs/HfO$_2$-(layer-I)/p-Si devices, where such memristive effect is activated/deactivated by light pulses. The memory window and high-to-low resistance ratio of the device are obtained to be ~1 V and ~10, respectively, which suggest the performance of a standard state-of-the-art memristor. Further, the present device offers a voltage-sweep-endurance up to at least 150 cycles and the memory retention up to ~10,000 s. Such a device concept can be extended for a combination of different nanoparticles with various dimensions and dielectric layers to optimize their memristive effect for achieving CMOS-compatible memory devices with superior reliability.