Skyrmion-mediated Nonvolatile Ternary Memory
Md Mahadi Rajib, Namita Bindal, Ravish Kumar Raj, Brajesh Kumar Kaushik, Jayasimha Atulasimha

TL;DR
This paper proposes a skyrmion-mediated, voltage-controlled magnetic tunnel junction-based ternary memory system that is energy-efficient, thermally robust, and offers significant improvements over existing multistate magnetic memories, with potential neural network applications.
Contribution
It introduces a novel VCMA-based, skyrmion-mediated ternary memory system using p-MTJ, demonstrating high thermal stability, low energy consumption, and superior area and energy efficiency.
Findings
99% switching probability at room temperature with thermal noise
Requires approximately 3 femtojoules per switching operation
At least 2x area and 60x energy efficiency improvements over state-of-the-art memories
Abstract
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that voltage-controlled magnetic anisotropy (VCMA) based writing is highly energy-efficient compared to other writing methods used in non-volatile nano-magnetic binary memory systems. In this study, we introduce a new, VCMA-based and skyrmion-mediated non-volatile ternary memory system using a perpendicular magnetic tunnel junction (p-MTJ) in the presence of room temperature thermal perturbation. We have also shown that ternary states {-1, 0, +1} can be implemented with three magnetoresistance values obtained from a p-MTJ corresponding to ferromagnetic up, down, and skyrmion state, with 99% switching probability in the presence of room temperature thermal…
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Taxonomy
TopicsMagnetic properties of thin films · Advanced Memory and Neural Computing · Quantum and electron transport phenomena
