Capping Layer Effects on $Sb_{2}S_{3}$-based Reconfigurable Photonic Devices
Ting Yu Teo, Nanxi Li, Landobasa Y. M. Tobing, Amy S. K. Tong, Doris, K. T. Ng, Zhihao Ren, Chengkuo Lee, Lennon Y. T. Lee, and Robert Edward, Simpson

TL;DR
This study investigates how $(ZnS)_{0.8}-(SiO_2)_{0.2}$ capping layers influence the stability, crystallization temperature, and optical performance of $Sb_{2}S_{3}$-based reconfigurable photonic devices, revealing ways to optimize device footprint and functionality.
Contribution
It demonstrates that capping layers can tune crystallization temperatures and enhance optical phase shifts, offering new strategies for designing compact, high-performance PCM photonic devices.
Findings
A 30 nm cap prevents sulfur loss in PCMs.
Capping alters crystallization temperatures of $Sb_{2}S_{3}$ and Ag-doped $Sb_{2}S_{3}$.
Capped devices show larger resonant frequency shifts upon crystallization.
Abstract
Capping layers are essential for protecting phase change materials (PCMs) used in non-volatile photonics technologies. This work demonstrates how caps radically influence the performance of and Ag-doped integrated photonic devices. We found that at least 30 nm of capping material is necessary to protect the material from Sulfur loss. However, adding this cap affects the crystallization temperatures of the two PCMs in different ways. The crystallization temperature of and Ag-doped increased and decreased respectively, which is attributed to interfacial energy differences. Capped and uncapped Ag-doped microring resonator (MRR) devices were fabricated and measured to understand how the cap affects the device performance. Surprisingly, the resonant frequency of the MRR exhibited a larger…
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Taxonomy
TopicsPhase-change materials and chalcogenides · Photonic and Optical Devices · Chalcogenide Semiconductor Thin Films
