Advanced Mid-Infrared Plasmonic Waveguides For On-Chip Integrated Photonics

TL;DR

This paper demonstrates the development of polyethylene-based dielectric-loaded surface plasmon polariton waveguides for mid-infrared integrated photonics, enabling miniaturized, low-loss, and complex on-chip devices for sensing and communication.

Contribution

It introduces a novel fabrication and characterization approach for LWIR plasmonic waveguides using organic polymers, advancing mid-IR PIC technology.

Findings

Achieved first-time plasmonic operation of polyethylene DLSPP waveguides.

Demonstrated low bending losses (~1.3 dB) and propagation lengths (~1 mm).

Enabled precise control of mode parameters for mid-IR applications.

Abstract

Long-wave infrared (LWIR, 8-14 um) photonics is a rapidly growing research field within the mid-IR with applications in molecular spectroscopy and optical free-space communication. LWIR-applications are often addressed using rather bulky tabletop-sized free-space optical systems, preventing advanced photonic applications such as rapid-time-scale experiments. Here, device miniaturization into photonic integrated circuits (PICs) with maintained optical capabilities is key to revolutionize mid-IR photonics. Sub-wavelength mode confinement in plasmonic structures enabled such miniaturization approaches in the visible-to-near-IR spectral range. However, adopting plasmonics for the LWIR needs suitable low-loss and -dispersion materials with compatible integration strategies to existing mid-IR technology. In this work we further unlock the field of LWIR/mid-IR PICs, by combining photolithographic patterning of organic polymers with dielectric-loaded surface plasmon polariton (DLSPP) waveguides. In particular, polyethylene shows favorable optical properties, including low refractive index and broad transparency between ~2-200 um. We investigate the whole value chain, including design, fabrication, and characterization of polyethylene-based DLSPP waveguides and demonstrate their first-time plasmonic operation and mode guiding capabilities along s-bend structures. Low bending losses of ~1.3 dB and straight-section propagation lengths of ~1 mm, pave the way for unprecedented, complex on-chip mid-IR photonic devices. Moreover, DLSPPs allow full control of the mode parameters (propagation length and guiding capabilities) for precisely addressing advanced sensing and telecommunication applications with chip-scale devices.