Moment canting and domain effects in antiferromagnetic DyRh$_2$Si$_2$

TL;DR

This study combines experimental and theoretical methods to analyze the magnetic phase transitions, moment canting, and surface properties of DyRh₂Si₂, revealing complex magnetic behavior and surface protection effects in this layered antiferromagnet.

Contribution

It provides a comprehensive analysis of magnetic transitions, moment canting, and surface termination effects in DyRh₂Si₂ using combined experimental and theoretical approaches.

Findings

Two magnetic transitions at 55 K and 12 K identified.

Moment canting occurs towards the [100] direction below 12 K.

Surface analysis shows Si-Rh-Si surface protects Dy layers.

Abstract

A combined experimental and theoretical study of the layered antiferromagnetic compound DyRh$_2$Si$_2$ in the ThCr$_2$Si$_2$-type structure is presented. The heat capacity shows two transitions upon cooling, the first one at the N{\'e}el temperature $T_{\rm N}=55\,\rm K$ and a second one at $T_{\rm N2}=12\,\rm K$. Using magnetization measurements, we study the canting process of the Dy moments upon changing the temperature and can assign $T_{\rm N2}$ to the onset of the canting of the magnetic moments towards the $[100]$ direction away from the $c$ axis. Furthermore, we found that the field dependence of the magnetization is highly anisotropic and shows a two-step process for $H\parallel 001$. We used a mean-field model to determine the crystalline electric field as well as the exchange interaction parameters. Our magnetization data together with the calculations reveal a moment orientation close to the $[101]$ direction in the tetragonal structure at low temperatures and fields. Applying photoemission electron microscopy, we explore the (001) surface of the cleaved DyRh$_2$Si$_2$ single crystal and visualize Si- and Dy-terminated surfaces. Our results indicate that the Si-Rh-Si surface protects the deeper lying magnetically active Dy layers and is thus attractive for investigation of magnetic domains and their properties in the large family of LnT$_2$Si$_2$ materials.