Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide

TL;DR

This paper demonstrates the integration of quantum emitters in hexagonal boron nitride (hBN) waveguides to create a monolithic quantum photonic circuit operating at room temperature, advancing on-chip quantum technologies.

Contribution

It introduces a top-down fabrication method combining hBN waveguides with local quantum emitter generation, enabling deterministic quantum photonic circuits in hBN.

Findings

Successful fabrication of hBN waveguides with integrated quantum emitters.

Room-temperature operation of the quantum photonic circuit.

First demonstration of a deterministic quantum photonic circuit in hBN.

Abstract

Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step towards deterministic quantum photonic circuits in hBN.