Disentangling superconductor and dielectric microwave losses in sub-micron $\rm Nb$/$\rm TEOS-SiO_2$ interconnects using a multi-mode microstrip resonator

TL;DR

This paper presents a method to distinguish and analyze microwave losses in superconducting Nb/SiO2 interconnects, optimizing fabrication processes and revealing low resistive losses at GHz frequencies.

Contribution

It introduces a multi-mode resonator technique combined with FEM modeling to separate dielectric and superconductor losses in superconducting interconnects.

Findings

Dielectric loss tangent of TEOS-SiO2 is approximately 0.0012, independent of Nb wire width.

Nb loss depends on processing method and wire width, with some configurations showing near-intrinsic resistance.

The lowest reported Nb resistive loss at 10 GHz is 13 μΩ, below the BCS minimum, indicating highly efficient superconducting interconnects.

Abstract

Understanding the origins of power loss in superconducting interconnects is essential for the energy efficiency and scalability of superconducting digital logic. At microwave frequencies, power dissipates in both the dielectrics and superconducting wires, and these losses can be of comparable magnitude. A novel method to accurately disentangle such losses by exploiting their frequency dependence using a multi-mode transmission line resonator, supported by a geometric factor concept and a 3D superconductor finite element method (FEM) modeling, is described. Using the method we optimized a planarized fabrication process of reciprocal quantum logic (RQL) for the interconnect loss at 4.2 K and GHz frequencies. The interconnects are composed of niobium ($\rm Nb$) insulated by silicon dioxide made with a tetraethyl orthosilicate precursor ($\rm TEOS-SiO_2$). Two process generations use damascene fabrication, and the third one uses Cloisonn\'{e} fabrication. For all three, $\rm TEOS-SiO_2$ exhibits a dielectric loss tangent $\tan \delta = 0.0012 \pm 0.0001$, independent of $\rm Nb$ wire width over $0.25 - 4 \: \mu m$. The $\rm Nb$ loss varies with both the processing and the wire width. For damascene fabrication, scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDS) reveal that Nb oxide and Nb grain growth orientation increase the loss above the Bardeen Cooper Schrieffer (BCS) minimum theoretical resistance $R _{BCS}$. For Cloisonn\'{e} fabrication, the $0.25 \: \mu m$ wide $\rm Nb$ wires exhibit an intrinsic resistance $R_s = 13 \pm 1.4 \: \mu \Omega$ at 10 GHz, which is below $R_{BCS} \approx 17 \: \mu \Omega$. That is arguably the lowest resistive loss reported for $\rm Nb$.