Spontaneous topological Hall effect induced by non-coplanar antiferromagnetic order in intercalated van der Waals materials
H. Takagi, R. Takagi, S. Minami, T. Nomoto, K. Ohishi, M.-T. Suzuki,, Y. Yanagi, M. Hirayama, N. D. Khanh, K. Karube, H. Saito, D. Hashizume, R., Kiyanagi, Y. Tokura, R. Arita, T. Nakajima, S. Seki

TL;DR
This study discovers non-coplanar antiferromagnetic order in specific van der Waals materials, demonstrating a giant spontaneous topological Hall effect driven by scalar spin chirality, enabling electrical readout of antiferromagnetic states.
Contribution
The paper provides experimental verification of the spontaneous topological Hall effect in non-coplanar antiferromagnets, identifying new materials and elucidating the underlying scalar spin chirality mechanism.
Findings
Large spontaneous Hall effect observed despite negligible net magnetization.
Non-coplanar antiferromagnetic order confirmed by neutron scattering and calculations.
Hall effect explained by topological origin from scalar spin chirality.
Abstract
In ferromagnets, electric current generally induces transverse Hall voltage in proportion to magnetization (anomalous Hall effect), and it is frequently used for electrical readout of the up and down spin states. While these properties are usually not expected in antiferromagnets, recent theoretical studies predicted that non-coplanar antiferromagnetic order with finite scalar spin chirality (i.e. solid angle spanned by neighboring spins) can often induce large spontaneous Hall effect even without net magnetization or external magnetic field. This phenomenon, i.e. spontaneous topological Hall effect, can potentially be used for the efficient electrical readout of the antiferromagnetic states, but its experimental verification has long been elusive due to the lack of appropriate materials hosting such exotic magnetism. Here, we report the discovery of all-in-all-out type non-coplanar…
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Taxonomy
TopicsAdvanced Condensed Matter Physics · 2D Materials and Applications · Magnetic properties of thin films
