Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing

TL;DR

This paper presents a scalable 200 mm wafer process for graphene-quantum dot hybrid photodetectors, achieving high yield, broad spectral responsivity, and integration with CMOS technology for infrared imaging applications.

Contribution

It introduces a large-scale fabrication method for GFET-QD photodetectors with high yield and demonstrates their integration into image sensor systems.

Findings

High fabrication yield of 96% on 200 mm wafers

Responsivity of 10^5 - 10^6 V/W across 400-1800 nm

External quantum efficiency of 20% in short-wavelength IR

Abstract

A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at up to 100 frames per second. Spectral sensitivity compares well to that obtained using similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability at a wide operation range and external quantum efficiency of 20% in the short-wavelength infrared range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications.