Topology hierarchy of transition metal dichalcogenides built from quantum spin Hall layers

TL;DR

This paper introduces a new class of layered transition metal dichalcogenides with tunable topological phases, revealing a hierarchy of weak and strong topological insulators and potential for quantum electronic applications.

Contribution

The study demonstrates the synthesis and characterization of 2M-TMDs with tunable topological properties, expanding the understanding of topological phase hierarchy in layered materials.

Findings

2M-WSe2, MoS2, MoSe2 are weak topological insulators

2M-WS2 is a strong topological insulator

Interlayer distance tuning induces topological phase transitions

Abstract

The evolution of the physical properties of two-dimensional material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal two-dimensional building blocks of various three-dimensional topological phases. However, the stacking geometry was previously limited to the bulk 1T'-WTe2 type. Here, we introduce the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, we revealed a topology hierarchy: 2M-WSe2, MoS2, and MoSe2 are weak topological insulators (WTIs), whereas 2M-WS2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. We propose that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with two-dimensional materials.