Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering
Ugur D. Menda, Guilherme Ribeiro, Jonas Deuermeier, Esther L\'opez,, Daniela Nunes, Santanu Jana, Irene Artacho, Rodrigo Martins, Iv\'an, Mora-Ser\'o, Manuel J. Mendes, I\~nigo Ramiro

TL;DR
This paper demonstrates that quantum-dot-in-perovskite solar cells can effectively mitigate thermal escape of carriers from the intermediate band through bandgap engineering, enabling high-efficiency intermediate band solar cells at room temperature.
Contribution
It introduces a method to suppress thermal carrier escape in IBSCs by bandgap engineering in QDiP materials, advancing the development of high-efficiency solar cells.
Findings
The IB is thermally decoupled from VB and CB in QDiP solids.
The activation energy for thermal escape is measured at 204 meV.
Thermal escape mitigation is effective at room temperature.
Abstract
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than conventional single-junction solar cells. For this, additional requirements are imposed to the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence and conduction bands (VB and CB). Quantum-dot-in-perovskite (QDiP) solids, where inorganic quantum dots (QDs) are embedded in a halide perovskite matrix, have been recently suggested as a promising material platform for developing IBSCs. In this work, QDiP solids with excellent morphological and structural quality and strong absorption and emission related to the presence of in-gap QD levels are synthesized. With them, QDiP-based IBSCs are fabricated and, by means of temperature-dependent…
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Taxonomy
TopicsPerovskite Materials and Applications · Quantum Dots Synthesis And Properties · Semiconductor Quantum Structures and Devices
