Manipulating solid-state spin concentration through charge transport
Guoqing Wang, Changhao Li, Hao Tang, Boning Li, Francesca Madonini,, Faisal F Alsallom, Won Kyu Calvin Sun, Pai Peng, Federica Villa, Ju Li, Paola, Cappellaro

TL;DR
This paper demonstrates a method to control solid-state spin defect concentration via charge transport in diamond, enabling tunable interactions for quantum sensing and many-body physics studies.
Contribution
It introduces a charge transport technique to modulate spin defect density in diamond, maintaining coherence and enabling dynamic control of spin interactions.
Findings
Spin defect concentration increased by a factor of 2.
Maintained NV center coherence time ($T_2$) during modulation.
Characterized charge transport and defect charge state changes with high spatial resolution.
Abstract
Solid-state spin defects are attractive candidates for developing quantum sensors and simulators. The spin and charge degrees of freedom in large defect ensembles are a promising platform to explore complex many-body dynamics and the emergence of quantum hydrodynamics. However, many interesting properties can be revealed only upon changes in the density of defects, which instead is usually fixed in material systems. Increasing the interaction strength by creating denser defect ensembles also brings more decoherence. Ideally one would like to control the spin concentration at will, while keeping fixed decoherence effects. Here we show that by exploiting charge transport, we can take some first steps in this direction, while at the same time characterizing charge transport and its capture by defects. By exploiting the cycling process of ionization and recombination of NV centers in…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Diamond and Carbon-based Materials Research · Atomic and Subatomic Physics Research
