Valleytronics in bulk MoS$_2$ by optical control of parity and time symmetries
Igor Tyulnev, \'Alvaro Jim\'enez-Gal\'an, Julita Poborska, Lenard, Vamos, Rui F. Silva, Philip St. J. Russell, Francesco Tani, Olga Smirnova,, Misha Ivanov, Jens Biegert

TL;DR
This paper demonstrates a universal, all-optical method to control valley polarization in bulk MoS$_2$, a centrosymmetric material, by transiently breaking symmetries with phase-shaped optical pulses, enabling fast valleytronic device applications.
Contribution
It introduces a non-resonant, optical control technique for valley polarization in bulk MoS$_2$, extending valleytronics beyond monolayer materials.
Findings
Valley polarization can be optically controlled in bulk MoS$_2$.
Phase rotation of control pulses induces valley polarization.
Second harmonic generation depends on phase rotation, confirming control.
Abstract
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are symmetry conditions that require monolayer structures or specific material engineering, non-resonant optical control to avoid energy dissipation, and the ability to switch valley polarization at optical speed. We demonstrate all-optical and non-resonant control over valley polarization using bulk MoS, a centrosymmetric material with zero Berry curvature at the valleys. Our universal method utilizes spin-angular momentum-shaped tri-foil optical control pulses to switch the material's electronic topology to induce valley polarization by transiently breaking time and space inversion symmetry through a simple phase rotation. The dependence of the…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Photonic and Optical Devices · Mechanical and Optical Resonators
