Back-end and Flexible Substrate Compatible Analog Ferroelectric Field Effect Transistors for Accurate Online Training in Deep Neural Network Accelerators
Sayani Majumdar, Ioannis Zeimpekis

TL;DR
This paper introduces a flexible, low-cost ferroelectric FET device suitable for analog neural network training, demonstrating high accuracy and stable conductance states for scalable deep learning hardware.
Contribution
It presents a novel ferroelectric FET design compatible with flexible substrates, enabling precise analog weight updates for efficient online DNN training.
Findings
Achieved >96% accuracy on MNIST dataset.
Demonstrated >10^4 conductance states with reproducibility.
Showed linear and symmetric weight updates in hybrid devices.
Abstract
Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities such as nonlinearity, asymmetry, limited bit precision and dynamic weight update range within constrained power budget. Here, we report a three-terminal Ferroelectric-Field-Effect-Transistor based on low thermal budget processes that can work efficiently as an analog synaptic transistor. Ferroelectric polymer P(VDF-TrFE) as the gate insulator and 2D semiconductor MoS2 as the n-type semiconducting channel material makes them suitable for flexible and wearable substrate integration. The analog conductance of the FeFETs can be precisely manipulated by employing a ferroelectric-dielectric layer as the gate stack. The ferroelectric-only devices show…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Multiferroics and related materials
