Topological magnetic memory with multiply-connected planar magnetic nanoelements

TL;DR

This paper introduces a coding scheme for storing linked bit strings in planar magnetic nanoelements with holes, leveraging topological properties to enhance information capacity and stability.

Contribution

It develops analytical expressions for magnetization distributions in multiply-connected nanoelements and discusses their energy barriers, enabling topological magnetic memory.

Findings

Nanoelements with holes can store more information than simply-connected ones.

Linked bit states are protected by energy barriers.

Analytical models for magnetization distributions are provided.

Abstract

A coding scheme is introduced, allowing to store a set of linked bit strings in planar magnetic nanoelements with holes. Analytical expressions for the corresponding magnetization distributions are developed up to a homotopy and the specific examples are given for doubly- and triply-connected cases. The energy barriers, protecting the information-bearing states, are discussed. Compared to a set of disparate simply-connected nanoelements of the same total connectivity, the nanoelements with holes can hold much more information due to the possibility of linking the individual bits.