Trap-limited electrical properties of organic semiconductor devices

TL;DR

This study explores how intentionally placed traps in organic semiconductor devices affect their electrical behavior, revealing that trap position significantly influences charge transport and injection barriers.

Contribution

It introduces a comprehensive electrical model that explains how trap location impacts charge distribution, electric field, and device performance in organic semiconductors.

Findings

Trap position alters charge distribution and electric field.

Proximity of traps to electrodes increases charge injection barriers.

The proposed model accurately predicts electrical property changes.

Abstract

We investigated the electrical properties of a unipolar organic device with traps that were intentionally inserted into a particular position in the device. Depending on their inserted position, the traps significantly alter the charge distribution and the resulting electric field as well as the charge transport behavior in the device. In particular, as the traps are situated closer to a charge-injection electrode, the band bending of a trap-containing organic layer occurs more strongly so that it effectively imposes a higher charge injection barrier. We propose an electrical model that fully accounts for the observed change in the electrical properties of the device with respect to the trap position.