Transient photocurrent and optical absorption of disordered thin-film semiconductors: in-depth injection and nonlinear response
Kazuhiko Seki, Naoya Muramatsu, Tomoaki Miura, Tadaaki Ikoma

TL;DR
This paper investigates how in-depth carrier injection affects transient photocurrent and optical absorption in disordered thin-film semiconductors, revealing new power-law behaviors and relations between transport coefficients.
Contribution
It provides a theoretical analysis incorporating in-depth carrier injection into simulations, revealing modified initial transient behaviors and clarifying the relation between mobility and diffusion in dispersive transport.
Findings
Initial transient current follows a 1/t^{1-alpha/2} dependence.
Asymptotic transient currents follow a 1/t^{1+alpha} dependence.
Transport coefficients' field dependence influences photocurrent decay regimes.
Abstract
The time-of-flight method is a fundamental approach for characterizing the transport properties of semiconductors. Recently, the transient photocurrent and optical absorption kinetics have been simultaneously measured for thin films; pulsed-light excitation of thin films should give rise to non-negligible in-depth carrier injection. Yet, the effects of in-depth carrier injection on the transient currents and optical absorption have not yet been elucidated theoretically. Here, by considering the in-depth carrier injection in simulations, we found a 1/t^{1-alpha/2} initial time (t) dependence rather than the conventional dependence under a weak external electric field, where alpha<1 is the index of dispersive diffusion.The asymptotic transient currents are not influenced by the initial in-depth carrier injection and follow the conventional 1/t^{1+alpha} time dependence. We…
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Taxonomy
TopicsPhotonic and Optical Devices · Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices
