Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices

TL;DR

This paper introduces a fractional-order circuit model combining Marcus-Hush-Chidsey and Yakopcic equations to accurately describe the current-voltage behavior of resistive switching memory devices, extending the state variable dynamics.

Contribution

The novel fractional derivative extension improves the modeling of resistive memory devices, providing a more accurate and flexible description of their electrical behavior.

Findings

Model fits experimental data with high fidelity

Fractional derivative enhances the dynamic description

Applicable to electrochemical metallization memory devices

Abstract

We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy.