Iterative density matrix revisited: Excitonic phenomena to InAs quantum well as a saturable absorber
Sami Ortakaya

TL;DR
This paper revisits iterative density matrix methods to model excitonic phenomena and saturable absorption in InAs quantum wells, incorporating full frequency range analysis beyond weak absorption limits.
Contribution
It introduces an improved iterative density matrix approach that accounts for the entire frequency spectrum and models excitonic effects in quantum wells more accurately.
Findings
Effective modeling of heavy-hole excitons in InAs quantum wells.
Demonstration of saturation behavior fitting in the absorption process.
Enhanced understanding of nonlinear optical responses in quantum well structures.
Abstract
By solving the Liouville equation, third-order nonlinear terms is found via iterative density matrix. Regarding the improved modeling, all frequency range is taken instead of weak absorptive limit. Considered process can be compared with saturation fitting for heavy-hole excitons in the InAs quantum well.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Quantum and electron transport phenomena
