Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating

TL;DR

This paper demonstrates how ionic gating can modulate Hanle magnetoresistance in ultrathin platinum films, highlighting the role of surface Rashba fields in controlling spin-related effects for potential spintronic applications.

Contribution

It introduces a novel method of modulating HMR in ultrathin Pt using ionic gating, emphasizing the influence of surface Rashba fields on spin transport.

Findings

Ionic gating effectively modulates HMR in ultrathin platinum.

Surface Rashba fields dominate the modulation mechanism.

Potential for gate-tunable spintronic devices.

Abstract

Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and Pt plays the dominant role in the modulation. This finding can facilitate investigations of gate-tunable, spin-related effects and fabrication of spin devices.