Emergence of metallic surface states and negative differential conductance in thin $\beta$-FeSi$_2$ films on Si(001)
Keisuke Sagisaka, Tomoko Kusawake, David Bowler, Shinya Ohno

TL;DR
This study reveals metallic surface states and negative differential conductance in thin $eta$-FeSi$_2$ films on Si(001), combining experimental STM/STS data with DFT calculations to elucidate surface electronic properties.
Contribution
It provides detailed experimental and theoretical analysis of surface states in $eta$-FeSi$_2$ films, confirming metallic states and energy gaps through STM, STS, and DFT.
Findings
Metallic surface states confirmed by STS and DFT.
Fermi level pinned by surface state in the bulk band gap.
Negative differential conductance observed at 0.45 eV above Fermi level.
Abstract
The electronic properties of the surface of -FeSi have been debated for a long while. We studied the surface states of -FeSi films grown on Si(001) substrates using scanning tunnelling microscopy (STM) and spectroscopy (STS), with the aid of density functional theory (DFT) calculations. STM simulations using the surface model proposed by Romanyuk et al. [Phys. Rev. B 90, 155305 (2014)] reproduce the detailed features of experimental STM images. The result of STS showed metallic surface states in accordance with theoretical predictions. The Fermi level was pinned by a surface state that appeared in the bulk band gap of the -FeSi film, irrespective of the polarity of the substrate. We also observed negative differential conductance at 0.45 eV above the Fermi level in STS measurements performed at 4.5 K, reflecting the presence of an energy gap in the…
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