Iridium-doping as a strategy to realize visible light absorption and p-type behavior in BaTiO3

TL;DR

This paper demonstrates that iridium doping transforms BaTiO3 from an n-type to a p-type semiconductor, enabling visible-light absorption and expanding its potential for solar energy and optoelectronic applications.

Contribution

The study introduces iridium doping as a novel method to induce p-type behavior and visible-light absorption in BaTiO3, supported by experimental and computational analysis.

Findings

Iridium doping induces p-type conductivity in BaTiO3.

Visible-light absorption is achieved through in-gap energy levels created by Ir.

Doping reduces Ti3+ donor levels and oxygen vacancies.

Abstract

BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via doping and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite significant progress, achieving visible-light absorbing BTO with tuneable carrier concentration has been challenging, a crucial requirement for many applications. In this work, a p-type BTO with visible-light absorption is realized via iridium doping. Detailed analysis using advanced spectroscopy tools and computational electronic structure analysis is used to rationalize the n- to p-type transition after Ir doping. Results offered mechanistic insight into the interplay between the dopant site occupancy, the dopant position within the band gap, and the defect chemistry affecting the carrier concentration. A decrease in the Ti3+ donor levels concentration and the mutually correlated oxygen vacancies upon Ir doping is attributed to the p-type behavior. Due to the formation of Ir3+ or Ir4+ in-gap energy levels within the forbidden region, the optical transition can be elicited from or to such levels resulting in visible-light absorption. This newly developed Ir-doped BTO can be a promising p-type perovskite-oxide with imminent applications in solar fuel generation, spintronics and optoelectronics.