Non-adiabatic Berry phase for semiconductor heavy holes under the coexistence of Rashba and Dresselhaus spin-orbit interactions
Tatsuki Tojo, Kyozaburo Takeda

TL;DR
This paper investigates the non-adiabatic Berry phase in semiconductor heavy holes with Rashba and Dresselhaus interactions, revealing how non-adiabatic effects and quasi-degenerate points influence the Berry phase and induce resonant phenomena.
Contribution
It formulates the non-Abelian Berry connection and phase for multiband systems with spin-orbit interactions, highlighting non-adiabatic effects and off-diagonal components in semiconductor holes.
Findings
Non-adiabatic processes alter the Berry phase quantization.
Quasi-degenerate points enhance intersubband transitions.
Off-diagonal components cause discontinuities and resonant repulsion.
Abstract
We formulate the non-Abelian Berry connection (tensor ) and phase (matrix ) for a multiband system and apply them to semiconductor holes under the coexistence of Rashba and Dresselhaus spin-orbit interactions. For this purpose, we focus on the heavy-mass holes confined in a SiGe two-dimensional quantum well, whose electronic structure and spin texture are explored by the extended approach. The strong intersubband interaction in the valence band causes quasi-degenerate points except for point of the Brillouin zone center. These points work as the singularity and change the Abelian Berry phase by the quantization of under the adiabatic process. To explore the influence by the non-adiabatic process, we perform the contour integral of faithfully along the equi-energy surface by combining the…
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Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · Quantum, superfluid, helium dynamics
