Non-equilibrium VLS-grown stable ST12-Ge thin film on Si substrate: A study on strain-induced band-engineering

TL;DR

This study demonstrates a novel non-equilibrium VLS method to grow stable ST12-Ge thin films on Si, revealing strain-induced band structure modifications that enable potential high-speed CMOS device applications.

Contribution

It introduces a new growth technique for stable ST12-Ge films on Si and explores strain-induced band engineering through experimental and theoretical analysis.

Findings

ST12-Ge films grown at 180-250°C are thermally stable up to 350°C.

Compressive stress varies from 0.5 to 7.5 GPa, affecting band gaps.

Strain transforms the fundamental band gap from indirect to direct.

Abstract

The current work describes a novel method of growing thin films of stable crystalline ST12-Ge, a high pressure polymorph of Ge, on Si substrate by a non-equilibrium VLS-technique. The study explores the scheme of band engineering of ST12-Ge by inducing process-stress into it as a function of the growth temperature and film thickness. In the present work, ST12-Ge films are grown at 180 C - 250 C to obtain thicknesses of ~4.5-7.5 nm, which possess extremely good thermal stability up to a temperature of ~350 C. Micro-Raman study shows the stress induced in such ST12-Ge films to be compressive in nature and vary in the range of ~0.5-7.5 GPa. The measured direct band gap is observed to vary within 0.688 eV to 0.711 eV for such stresses, and four indirect band gaps are obtained to be 0.583 eV, 0.614-0.628 eV, 0.622-0.63 eV and 0.623-0.632 eV, accordingly. The corresponding band structures for unstrained and strained ST12-Ge are calculated by performing DFT simulation, which shows that a compressive stress transforms the fundamental band gap at M-G valley from indirect to direct one. Henceforth, the possible route of strain induced band engineering in ST12-Ge is explored by analyzing all the transitions in strained and unstrained band structures along with substantiation of the experimental results and theoretical calculations. The investigation shows that unstrained ST12-Ge is a natural n-type semiconductor which transforms into p-type upon incorporation of a compressive stress of ~5 GPa, with the in-plane electron effective mass components at M-G band edge to be ~0.09 me. Therefore, such band engineered ST12-Ge exhibits superior mobility along with its thermal stability and compatibility with Si, which can have potential applications to develop high-speed MOS devices for advanced CMOS technology.