Manipulation of valley and spin properties in two-dimensional Janus WSiGeZ$_4$ (Z=N,P, As) through symmetry control
Sajjan Sheoran, Ankita Phutela, Ruman Moullik, and Saswata, Bhattacharya

TL;DR
This study demonstrates how symmetry control in Janus WSiGeZ$_4$ monolayers enhances valley and spin properties, with potential applications in spintronics and valleytronics.
Contribution
It reveals the impact of stacking order and symmetry on Berry curvature and Rashba effect in WSiGeZ$_4$, introducing a symmetry-adapted k.p Hamiltonian for valley analysis.
Findings
Berry curvature increased by up to 300% through symmetry control
Significant Rashba coefficient enhancement observed
Multiple valleys identified in WSiGeP$_4$ and WSiGeAs$_4$
Abstract
A class of septuple-atomic-layer two-dimensional (2D) materials, MAZ, is sought as an alternative to 2D hexagonal transition metal dichalcogenides in the field of valleytronics and spintronics. In these materials, the structural symmetry can be varied by changing the stacking of its three parts in the monolayer. We show that in Janus monolayer WSiGeZ (Z=N, P, As), the Berry curvature and Rashba effect are enhanced by modifying the stacking orders. Intrinsic electric field and composition of the d orbitals play a dominant role in determining these properties. The vertical field lifts the spin degeneracy along in-plane direction, inducing the Rashba effect around point. The in-plane orbitals under the influence of in-plane electric field contribute to the Zeeman splitting of bands at K/K' points. Berry curvature is strengthened by up to 300% compared to its ground…
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Taxonomy
Topics2D Materials and Applications · Perovskite Materials and Applications
