Improved noise performance from the next-generation buried-channel p-Mosfet SiSeROs
Tanmoy Chattopadhyay, Sven Herrmann, Matthew Kaplan, Peter Orel, Kevan, Donlon, Gregory Prigozhin, R. Glenn Morris, Michael Cooper, Andrew Malonis,, Steven W. Allen, Marshall W. Bautz, Chris Leitz

TL;DR
This paper reports on the development of a buried-channel SiSeRO with significantly improved noise performance, achieving around 4.5 electrons RMS, suitable for advanced astronomical X-ray imaging.
Contribution
The work introduces a buried-channel SiSeRO that substantially reduces noise compared to previous surface-channel prototypes, advancing on-chip charge detection technology.
Findings
Achieved 4.5 electrons RMS noise performance
Demonstrated 132 eV energy resolution at 5.9 keV
Showed potential for further noise reduction with digital filtering
Abstract
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. In our earlier work, we characterized a number of first prototype SiSeROs with the MOSFET transistor channels at the surface layer. An equivalent noise charge (ENC) of around 15 electrons root mean square (RMS) was obtained. In this work, we examine the first buried-channel SiSeRO. We have achieved substantially improved noise performance of around 4.5 electrons root mean square…
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Taxonomy
TopicsCCD and CMOS Imaging Sensors · Particle Detector Development and Performance · Thin-Film Transistor Technologies
